Power semiconductor devices for the 1990s-Reference-Cited by-同舟云学术

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Power semiconductor devices for the 1990s

Published:1993-01 Issue:1-2 Volume:24 Page:31-39
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Jayant Baliga B.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Evolution of MOS-bipolar power semiconductor technology;Baliga,1988

2. Modern Power Devices;Baliga,1987

3. Impact of VLSI technology on power devices;Baliga,1989

4. The insulated gate transistor;Baliga;IEEE Trans. Electron Devices,1984

5. Switching speed enhancement in insulated gate transistors by electron irradiation;Baliga;IEEE Trans. Electron Devices,1984

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A GRU-Based Method of IGBT Module Degradation Prediction Under Changing Working Conditions;2022 Global Reliability and Prognostics and Health Management (PHM-Yantai);2022-10-13

2. Educational issues for power semiconductor devices;Microelectronics Journal;1996-03

3. Analysis of turn-on transient in power bipolar-mode FET (BMFET);Solid-State Electronics;1995-02

4. Trade-off between blocking gain and on-resistance in static induction transistor;Solid-State Electronics;1995-02

5. Quarter century of field of microelectronics and “microelectronics journal”: Joint crossroads for further progress and development;Microelectronics Journal;1994-02

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