Electrical characterization and reliability of double-doped drain MOS transistors compatible with an EEPROM process
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference32 articles.
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4. Simple gate-to-drain overlapped MOSFET's using poly spacers for high immunity to channel hot-electron degradation;Chen;IEEE Electr. Dev. Lett.,1990
5. Hot-electron resistant device processing and design: a review;Sanchez;IEEE Trans. Semiconductor Manuf.,1989
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