Preparation of BiSrCaCuO thin films by atomic layer-by-layer molecular-beam-epitaxy and high-resolution transmission electron microscopy analysis of the film/substrate interface and of growth defects-Reference-Cited by-同舟云学术

Preparation of BiSrCaCuO thin films by atomic layer-by-layer molecular-beam-epitaxy and high-resolution transmission electron microscopy analysis of the film/substrate interface and of growth defects

Published:1997-04 Issue:1-2 Volume:251 Page:44-47
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Dreßen J.,Zakharov N.D.,Hoffschulz H.,Stahl H.,Hesse D.,Güntherodt G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference6 articles.

1. Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds

2. In-situ growth of Bi-Sr-Ca-Cu-O films by shutter-controlled molecular beam epitaxy

3. High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi2Sr2Can−1CunO4+2n + δ films on SrTiO3 and LaAlO3

4. The phase equilibria of Bi2Sr2Ca2Cu3O10 in the system Bi2O3SrOCaOCuO

5. Surface topography and bulk structure of Bi2Sr2CaCu2O8+δ films observed by scanning tunneling microscopy and high-resolution transmission electron microscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamic growth model of single crystal Bi-2212 whisker;Physica C: Superconductivity;2012-12

2. Thermodynamic parameters of Bi2Sr2CaCu2O8+δ thin film prepared by molecular beam epitaxy;Applied Surface Science;2011-09

3. Critical parameters in the molecular beam epitaxy growth of Bi2Sr2Can-1CunOyand (Sr, Ca)mCunOysuperconductor thin films;Superconductor Science and Technology;1999-01-01