Investigation of the van der Waals epitaxy gap in isostructural semiconducting germanium tellurides: HfGeTe 4 and ZrGeTe 4
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference42 articles.
1. Synthesis, structure, and physical properties of the new group IV ternary tellurides, Cu2MTe3 (M = Ti, Zr, Hf)
2. Synthesis and physical properties of the new layered ternary tellurides MIrTe4 (M = Nb, Ta), and the structure of NbIrTe4
3. Niobium germanium telluride: A new member of the niobium(x)-M-tellurium(2x) family
4. TaNi2Te2, A Novel Layered Telluride, and TaCo2Te2, a Structural Variant with Peierls Distortion
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1. Signature of phonon anharmonicity in highly in-plane anisotropic ternary HfGeTe4 single crystals;Applied Physics Letters;2024-03-04
2. First-principles study on ultralow lattice thermal conductivity in HfGeTe4;Modern Physics Letters B;2022-08-20
3. Highly Efficient and Simultaneous Removal of Cr(VI) and Imidacloprid through a Ferrocene-Modified MIL-100(Fe) Composite from an Aqueous Solution;Langmuir;2022-05-16
4. First-principles investigation of in-plane anisotropies in XYTe4 monolayers with X = Hf, Zr, Ti and Y = Si, Ge;Physical Chemistry Chemical Physics;2022
5. Validity limits of the maximum entropy method;Chinese Journal of Physics;2021-06
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