Progress and prospects of GaN-based VCSEL from near UV to green emission-Reference-Cited by-同舟云学术

Progress and prospects of GaN-based VCSEL from near UV to green emission

Published:2018-01 Issue: Volume:57 Page:1-19
ISSN:0079-6727
Container-title:Progress in Quantum Electronics
language:en
Short-container-title:Progress in Quantum Electronics

Author:

Yu Hsin-chieh,Zheng Zhi-wei,Mei Yang,Xu Rong-bin,Liu Jian-ping,Yang Hui,Zhang Bao-ping,Lu Tien-chang,Kuo Hao-chung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

Reference116 articles.

1. Surface-emitting laser-its birth and generation of new optoelectronics field

2. GaInAsP/InP Surface Emitting Injection Lasers

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Optical properties of two‐dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors

5. Nitride-based semiconductors for blue and green light-emitting devices

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