Construction of localized state levels and near-infrared light absorption of silicon: B/P doping and first-principles calculations

Author:

Wang Xiuyu,Wang Tao,Ren Qun,Xu Jiangtao,Cui Yuang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference29 articles.

1. Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction;Zhao;Nanoscale Res. Lett.,2020

2. Narrow bandgap HgCdTe technology for IR sensing and imaging focal plane arrays;Pan,2022

3. Electrochemical epitaxial (200) PbSe submicron-plates on single-layer graphene for an ultrafast infrared response;Yang;J. Mater. Chem. C,2021

4. Numerical simulation of the effects of InAlSb barrier layers on the InSb mid-infrared photodetectors on a mismatched substrate;Zhao,2019

5. Ultrasensitive solution-processed broad-band photodetectors using CH3NH3PbI3 perovskite hybrids and PbS quantum dots as light harvesters;Liu;Nanoscale,2015

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