Author:
Debnath Ajit,Lalwani Suraj Kumar,Singh Sanjai,Sunny
Reference29 articles.
1. Ferroelectric random access memories;Ishiwara;J. Nanosci. Nanotechnol.,2012
2. Recent progress in ferroelectric-gate FETs;Ishiwara;Mater. Res. Soc.,2003
3. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory;Lue;IEEE Trans. Ultrason. Ferroelectrics Freq. Control,2003
4. An Improvement in C-V characteristics of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory using a silicon nitride buffer layer;Sugiyama;Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap.,2000
5. Novel 1T1C capacitor structure for high density FRAM;Jang;Dig. Tech. Pap. - Symp. VLSI Technol.,2000
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献