Effect of layer thickness on electrical characterization of Ag/Si schottky diode fabricated by thermal evaporation technique-Reference-Cited by-同舟云学术

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Effect of layer thickness on electrical characterization of Ag/Si schottky diode fabricated by thermal evaporation technique

Published:2016-12 Issue:23 Volume:127 Page:11151-11155
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Askari Mohammad Bagher,Shahryari Mehran,Nanekarani Shahryar,Bagheri Dehaghi Sedigheh

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Semiconductor Devices: Physics and Technology;Sze,2008

2. Titanium-silicon schottky barrier diodes;Cowley;Solid-State Electron.,1970

3. Semiconductor Surface and Interface;Monch,2001

4. Semiconductor Physical Electronics;Li,2006

5. Semiconductor Physics and Devices, Basic Principles;Neamen,2003

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1. A new route for the synthesis of n-type Ag2ZnSnS4 thin films by thermal vacuum evaporation for solar cell applications;Optical Materials;2022-12

2. An Alternative to Compound Semiconductors Using a Si-Based IR Detector;IEEE Transactions on Electron Devices;2022-01

3. Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of Al/(Ta 2 O 5 ) 0.85 (TiO 2 ) 0.15 /p-Si MIS Schottky barrier diodes fabricated by dc magnetron sputtering;Materials Science in Semiconductor Processing;2018-03

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