1. All-silicon tandem cells based on artificial semiconductor synthesized using silicon quantum dots in a dielectric matrix;Green,2005
2. Comparison of 6H–SiC 3C–SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Dev.,1993
3. Charge trapping properties of 3C- and 4H–SiC MOS capacitors with nitride gate oxides;Arora;IEEE Trans. Nucl. Sci.,2009
4. Electrical characteristics of polycrystalline 3C–SiC thin films;Ahn,2007
5. Silicon Carbide Micro electromechanical Systems for Harsh Environments;Cheung,2006