On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field-Reference-Cited by-同舟云学术

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On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field

Published:2011-04 Issue:7 Volume:122 Page:561-562
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Grado-Caffaro M.A.,Grado-Caffaro M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Threshold current and its temperature dependence in InGaAsP/InP strained quantum-well lasers under a magnetic field;Sugawara;Jpn. J. Appl. Phys.,1995

2. Calculated threshold currents of nitride- and phosphide-based quantum-well lasers;Rees;IEEE Photon. Technol. Lett.,1996

3. Effect of phonon bottleneck on quantum-dot laser performance;Sugawara;Appl. Phys. Lett.,1997

4. Feedback Systems;Cruz,1972

5. On the voltage sensitivity of current in electronic transport;Grado-Caffaro;Optik,2005

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