Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects-Reference-Cited by-同舟云学术

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Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects

Published:2016-10 Issue:20 Volume:127 Page:8662-8669
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Kong Yike,Liu Lei,Xia Sihao

Funder

Natural Science Foundation of Jiangsu Province-China

Fundamental Research Funds for the Central Universities-China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Influence of GaN template thickness and morphology on AlxGa1−xN luminescence properties;Halidou;Opt. Mater.,2013

2. AlxGa1−xN-based deep-ultraviolet 320×256 focal plane array;Cicek;Opt. Lett.,2012

3. Solar-blind AlGaN-based inverted heterostructure photodiodes;Tarsa;Appl. Phys. Lett.,2000

4. Gallium nitride photcathode development for imaging detectors;Siegmund;Proc. SPIE,2008

5. A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures;Sang;Sensors,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study on the electronic structure and optical properties of La 0.75 Sr 0.25 MnO 3-σ materials with oxygen vacancies defects;Current Applied Physics;2018-02

2. Corrigendum to “Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects” [Optik: Int. J. Light Electron Opt. 127 (20) (2016) 8662–8669];Optik;2016-10

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