Vacancy defects transform zinc tellurite glass from insulator to semiconductor: A first-principles prediction-Reference-Cited by-同舟云学术

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Vacancy defects transform zinc tellurite glass from insulator to semiconductor: A first-principles prediction

Published:2022-12 Issue: Volume:271 Page:170125
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Taha Mohamed^ORCID,Abdelhay Rahma A.,Khedr Mohamed H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Structure of bismuth borate glasses;Stone;Phys. Chem. Glass,2000

2. Tellurite glass: a new candidate for fiber devices;Wang;Opt. Mater.,1994

3. ZnTeO3 crystal growth by a modified Bridgman technique;Nawash;Mater. Res. Bull.,2014

4. Tellurite Glasses, Physical Properties and Data;El-Malawany,2002

5. Features of electronic polarizability and approach to unique properties in tellurite glasses;Komatsu;IJAG,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al<sub>2</sub>O<sub>3</sub>;Acta Physica Sinica;2024

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