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Design of white LED using GaN/In Ga(1−)N multiquantum well

  • Published:2015-12 Issue:24 Volume:126 Page:5820-5824
  • ISSN:0030-4026
  • Container-title:Optik
  • language:en
  • Short-container-title:Optik

Author:

Golmohammadi Saeed,Rabbani-Shabestari Seyyed Jafar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes;Nakamura;Appl. Phys. Lett.,1994

2. Zn-doped InGaN growth and InGaN/A1GaN double-heterostructure blue-light-emitting diodes;Nakamura;J. Cryst. Growth,1994

3. Band parameters for III–V compound semiconductors and their alloys;Vurgaftmana;J. Appl. Phys.,2001

4. Small band gap bowing in In(1−x)GaxN alloys;Wu;Appl. Phys. Lett.,2002

5. Nitride Semiconductor Devices: Principles and Simulation;Piprek,2007

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