Stoichiometry loss induced by ionic bombardment of InP surfaces: A challenge for electrochemistry combined with XPS-Reference-Cited by-同舟云学术

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Stoichiometry loss induced by ionic bombardment of InP surfaces: A challenge for electrochemistry combined with XPS

Published:2020-08 Issue: Volume:117 Page:106766
ISSN:1388-2481
Container-title:Electrochemistry Communications
language:en
Short-container-title:Electrochemistry Communications

Author:

Béchu S.,Aureau D.,Vigneron J.,Gonçalves A-M.,Frégnaux M.,Bouttemy M.,Etcheberry A.

Publisher

Elsevier BV

Subject

Electrochemistry

Reference21 articles.

1. Semiconductor Electrochemistry;Memming,2015

2. Interfacial Electrochemistry;Schmickler,2010

3. Electrochemistry at Semiconductor and Oxidized Metal Electrodes;Morisson,1980

4. Analysis of photocurrents at the semiconductor—electrolyte junction;Lemasson;Electrochim. Acta,1982

5. The photodissolution of InP;Preusser;Electrochim. Acta,1992

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on surface-characterization applications of X-ray photoelectron spectroscopy (XPS): Recent developments and challenges;Applied Surface Science Advances;2022-12

2. Homogeneous Nanoparticles of Multimetallic Phosphides via Precursor Tuning: Ternary and Quaternary M₂P Phases (M = Fe, Co, Ni);ACS Nanoscience Au;2022-08-09

3. XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface;Japanese Journal of Applied Physics;2022-03-01

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