Enhancing the specific capacitance of a porous silicon-based capacitor by embedding graphene combined with three-dimensional electrochemical etching-Reference-Cited by-同舟云学术

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Enhancing the specific capacitance of a porous silicon-based capacitor by embedding graphene combined with three-dimensional electrochemical etching

Published:2023-09 Issue: Volume:154 Page:107555
ISSN:1388-2481
Container-title:Electrochemistry Communications
language:en
Short-container-title:Electrochemistry Communications

Author:

Lin Jia-Chuan^ORCID,Liu Yi-Cheng,Lu Shan-Heng,Yen Hsu-Nan,Settu Kalpana

Funder

Taiwan Ministry of Science and Technology

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Electrochemistry

Reference23 articles.

1. Electrolytic shaping of germanium and silicon;Uhlir;Bell Labs Tech. J.,1956

2. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers;Canham;Appl. Phys. Lett.,1990

3. Theoretical descriptions of porous silicon;Delerue;Thin Solid Films,1995

4. Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon;Jia;Appl. Phys. Lett.,1996

5. Porous silicon formation: A quantum wire effect;Lehmann;Appl. Phys. Lett.,1991

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