Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films-Reference-Cited by-同舟云学术

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Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Published:2014-11 Issue: Volume:48 Page:99-102
ISSN:1388-2481
Container-title:Electrochemistry Communications
language:en
Short-container-title:Electrochemistry Communications

Author:

Colombara Diego,Crossay Alexandre,Regesch David,Broussillou Cedric,de Monsabert Thomas Goislard,Grand Pierre-Philippe,Dale Phillip J.

Funder

European Union's Seventh Framework Programme

Publisher

Elsevier BV

Subject

Electrochemistry

Reference38 articles.

1. Theoretical considerations governing the choice of the optimum semiconductor for photovoltaic solar energy conversion;Loferski;J. Appl. Phys.,1956

2. The theory of p–n junctions in semiconductor and p–n junction transistors;Shockley;Bell Syst. Tech. J.,1949

3. Semiconductor Electrochemistry;Memming,2001

4. Characterization of CuInSe2 material and devices: comparison of thermal and electrochemically prepared absorber layers;Dale;J. Phys. D. Appl. Phys.,2008

5. Properties of ZnO/CdS/CuInSe2 solar cells with improved performance;AbuShama;Prog. Photovolt. Res. Appl.,2004

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