Finite-element study of strain field in strained-Si MOSFET
Author:
Publisher
Elsevier BV
Subject
Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science
Reference22 articles.
1. TEM/CBED determination of strain in silicon-based submicrometric electronic devices;Armigliato;Micron,2000
2. Strain for CMOS performance improvement;Chan,2005
3. Effect of elastic relaxation on large-angle convergent-beam electron diffraction from cross-sectional specimens of GexSi1−x/Si strained-layer superlattices;Duan;Philosophical Magazine A,1994
4. Thin film relaxation in cross-sectional transmission electron microscopy specimens of GexSi1−x/Si strained-layer superlattices;Duan;Applied Physics Letters,1995
5. Convergent-beam electron diffraction study of modulations in semiconductor superlattices;Fung;Ultramicroscopy,1991
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