Irradiation and annealing of silicon planar transistors-Reference-Cited by-同舟云学术

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Irradiation and annealing of silicon planar transistors

Published:1966-04 Issue:4 Volume:9 Page:287-302
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Baldinger E.,Lenzlinger M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Zum elektrischen Verhalten von Halbleiterbauelementen unter dem Einfluss von Kernstrahlung;Zander,1963

2. Generation of openings in vacuum deposited SiO diffusion masking films

3. Radiation Damage in Semiconductors;Easley,1965

4. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prof. Dr. Ernst Baldinger (1911–1970);Zeitschrift für angewandte Mathematik und Physik ZAMP;1971-01

2. Effects of ionizing radiation on MOS devices;Solid-State Electronics;1969-02

3. Activation Energy of Defects in Neutron Irradiated Silicon;IEEE Transactions on Nuclear Science;1968

4. Effects of ionizing radiation on oxidized silicon surfaces and planar devices;Proceedings of the IEEE;1967

5. Ionization and Displacement Damage in Silicon Transistors;IEEE Transactions on Nuclear Science;1966-12

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