Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures—I. Electric field and potential distributions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”;Devices and Methods of Measurements;2021-10-15
3. Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers;IEEE Transactions on Electron Devices;2015-12
4. Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide;IEEE Transactions on Electron Devices;1983-12
5. The calculation of the carrier concentration in a symmetrical misim structure inversion layer;Solid State Communications;1980-05
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