An investigation into the behaviour of trapping centres in microplasmas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Avalanche Breakdown in Silicon
2. Theory of Microplasma Instability in Silicon
3. Effect of Dislocations on Breakdown in Silicon p‐n Junctions
4. A report on the delay time of an avalanche discharge in silicon
5. Statistics of the Recombinations of Holes and Electrons
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1. Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes;Semiconductors;2018-07-06
2. A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum;Semiconductors;2017-03
3. Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes;Semiconductors;2009-07
4. A probe detector for defectivity assessment in p-n junctions;IEEE Transactions on Electron Devices;2000-03
5. Statistical delay of microplasma breakdown in GaP p-n junctions;Semiconductors;1999-11
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