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Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAs

  • Published:1975-03 Issue:3 Volume:18 Page:267-275
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Woodcock J.M.,Shannon J.M.,Clark D.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 53 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

2. Effects of the MBE growth temperature on Si-doped AlxGa1-xAs (x=0, 0.26) and HEMT;Semiconductor Science and Technology;1992-09-01

3. Annealing of damage-induced deep levels in MeV Si-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-03

4. A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC‐Grown GaAs;Journal of The Electrochemical Society;1989-08-01

5. Formation of GaP1−xNx alloys by double ion implantation;Vacuum;1989-01
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