Thermal equilibrium noise of space charge limited current in silicon for holes with field-dependent mobility-Reference-Cited by-同舟云学术

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Thermal equilibrium noise of space charge limited current in silicon for holes with field-dependent mobility

Published:1975-02 Issue:2 Volume:18 Page:113-118
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tandon J.L.,Bilger H.R.,Nicolet M.-A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Proc. Int. Conf. Physics of Semiconductors,1960

2. Proc. Int. Conf. Physics of Semiconductors,1962

3. Proc. Int. Conf. Physics of Semiconductors,1964

4. Proc. Int. Conf. Physics of Semiconductors,1966

5. Proc. Int. Conf. Physics of Semiconductors,1968

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot electron noise in n-InSb;International Journal of Electronics;1980-05

2. Chapter 3 Space-Charge-Limited Solid-State Diodes;Semiconductors and Semimetals;1979

3. Noise and diffusion of hot holes in Si;Solid-State Electronics;1978-01

4. Effect of Hot Carriers on the Thermal Noise of p-Type Silicon and in SCLC Single Injection Diodes;Noise in Physical Systems;1978

5. Injection of electrons into semi-insulating GaAs;Physica Status Solidi (a);1976-09-16

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