Compositional and electrical properties of InSb MOS structure-Reference-Cited by-同舟云学术

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Compositional and electrical properties of InSb MOS structure

Published:1991-01 Issue:1 Volume:34 Page:107-109
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Su Y.K.,Huang C.J.,Leu R.L.,Pan F.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

2. Perspectives on III–V compound MIS structures

3. Interface characterization of InSb MOS structures

4. Phase composition of thin oxide films on InSb

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