Multilayered ion-implanted BARITT diodes with improved efficiency-Reference-Cited by-同舟云学术

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Multilayered ion-implanted BARITT diodes with improved efficiency

Published:1977-04 Issue:4 Volume:20 Page:291-295
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Eknoyan O.,Yang E.S.,Sze S.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Microwave BARITT diode with retarding field—An investigation

2. D.L. Scharfetter, unpublished computer program used to calculate the effective doping

3. Physics of Semiconductor Devices;Sze,1969

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. I–V characteristics of integrated n+pn− reachthrough diodes;Solid-State Electronics;1989-08

2. A study of multi-energy ion implantation;Journal of Electronics (China);1987-01

3. Optimum baritt structure;Solid-State Electronics;1982-09

4. Ion Implantation Processes in Silicon;Impurity Doping Processes in Silicon;1981

5. Microwave BARITT diode with retarding field—An investigation;Solid-State Electronics;1977-04

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