Microwave hot electron effects in semiconductor quantized inversion layers-Reference-Cited by-同舟云学术

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Microwave hot electron effects in semiconductor quantized inversion layers

Published:1977-04 Issue:4 Volume:20 Page:355-359
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ferry D.K.,Das P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Semiconductor Surfaces;Many,1965

2. Electrical Properties of Semiconductor Surfaces;Frankl,1967

3. Transport Properties of Electrons in Inverted Silicon Surfaces

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices;The Physics of Submicron Semiconductor Devices;1988

2. A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices;Physica Status Solidi (a);1984-02-16

3. Electronic properties of two-dimensional systems;Reviews of Modern Physics;1982-04-01

4. DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN Si INVERSION LAYERS;Le Journal de Physique Colloques;1981-10

5. HOT ELECTRON NOISE PROPERTIES OF SEMICONDUCTORS IN THE NON-ZERO COLLISION DURATION REGIME;Le Journal de Physique Colloques;1981-10

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