Double-heterostructure InGaAs/InP PIN photodetectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. InGaAsP heterostructure avalanche photodiodes with high avalanche gain
2. InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies
3. Performance of In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP avalanche photodiodes
4. Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes
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1. Bandwidth improvement of a homojunction p-i-n photodiode;IEEE Journal of Quantum Electronics;1997
2. Frequency and Time Response of Pin Photodiode;Journal of Optics;1993-09
3. Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy;Applied Physics Letters;1993-03-15
4. The InxGa1−xAsyP1−y (0.53;Journal of Crystal Growth;1992-10
5. Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers;Journal of Electronic Materials;1992-10
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