The effect of surface states on the characteristics of MIS field effect transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Proc. 3rd Int. Symp. on Gallium Arsenide and Related Compounds;Zuleeg,1970
2. A new mobility-field expression for the calculation of MOSFET characteristics
3. Bias dependence of GaAs and InP MESFET parameters
4. The influence of the interface states on the dynamic transconductance of mis-fets
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