Study of PtGaAs interface states
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
3. Characterization of the interface states at a Ag/Si interface from capacitance measurements
4. Determination of the density and the relaxation time of silicon-metal interfacial states
5. Recombination velocity effects on current diffusion and imref in schottky barriers
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1. EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS;International Journal of Modern Physics B;2011-02-10
2. Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates;Materials Science and Engineering: B;2001-11
3. Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes;Solid-State Electronics;2000-06
4. Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage;Physica B: Condensed Matter;1995-01
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