Author:
Joh D.Y.,Grannemann W.W.,Brown W.D.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. The variable-treshold transistor, a new electrically alterable, nondestructive, read only storage device;Wegener;IEEE International Electron Device Meeting,1967
2. READ-ONLY memory using MAS transistors
3. Charge storage characteristics of MIS structures employing dual‐insulator composites of HfO2–SiO2and SrTiO3–SiO2
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献