Impact ionization of shallow donor states in germanium, 4–7°K
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Electrical Conduction inn-Type Germanium at Low Temperatures
2. Theory of Low-Temperature Impact Ionization in High-Purity Germanium
3. Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors
4. Cascade Capture of Electrons in Solids
5. Recombination of Electrons and Donors inn-Type Germanium
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1. Theoretical approaches to nonlinear and chaotic dynamics of generation-recombination processes in semiconductors;Applied Physics A Solids and Surfaces;1989-02
2. Equal areas rules for filamentation in SNDC elements;Solid-State Electronics;1986-07
3. Stability of generation-recombination induced dissipative structures in semiconductors;Zeitschrift f�r Physik B Condensed Matter;1983-12
4. Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donors;Zeitschrift für Physik B Condensed Matter;1982-03
5. Exciton capture cross sections of indium and boron impurities in silicon;Solid State Communications;1980-12
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