The effects of X-ray irradiation-induced damage on reliability in MOS structures-Reference-Cited by-同舟云学术

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The effects of X-ray irradiation-induced damage on reliability in MOS structures

Published:1995-01 Issue:1 Volume:38 Page:95-99
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Shi-ho,Lee Ho-jun,Han Chul-hi,Lee Kwyro,Choi Sang-soo,Jeon Young-jin,Di Fabrizio Enzo,Gentili Massimo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. The Effects of Pressure, Temperature, and Time on the Annealing of Ionizing Radiation Induced Insulator Damage in N‐channel IGFET's

2. Defect generation in silicon dioxide from soft x‐ray synchrotron radiation

3. Defect generation in silicon dioxide from synchrotron radiation below 41 eV

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing Electronics with Advanced 3D X-ray Imaging Techniques, Nanoscale Tomography, and Deep Learning;Journal of Failure Analysis and Prevention;2024-08-09

2. Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors;Journal of Instrumentation;2023-08-01

3. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs;AIP Conference Proceedings;2015

4. An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors;Current Applied Physics;2013-01

5. An analysis of 100MeV F8+ ion and 50MeV Li3+ ion irradiation effects on silicon NPN rf power transistors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2010-08

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