SiGe-base heterojunction bipolar transistors: An analytical current gain and forward transit time model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Heterostructure bipolar transistors and integrated circuits
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5. SiGe-base heterojunction bipolar transistors: physics and design issues
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1. Effect of doping and stoichiometric profile on transport in SiGe heterojunction bipolar transistor;Journal of Physics D: Applied Physics;2016-07-28
2. Velocity overshoot analysis in SiGe and SiGeC HBT;International Journal of Electronics;2007-06
3. Quantum study of ultra-thin-base SiGe heterojunction bipolar transistor;International Journal of Electronics;2001-11
4. A base transport model for ultra-thin-base SiGe HBT;International Journal of Electronics;2000-11
5. Analytical modelling of current gain and frequency characteristics under high injection levels in Si/SiGe heterojunction bipolar transistors at 77 and 300K;Microelectronics Journal;1999-12
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