On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes-Reference-Cited by-同舟云学术

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On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes

Published:1991-10 Issue:10 Volume:34 Page:1077-1081
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mui D.,Strite S.,Morkoç H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Halbleitertheorie der Sperrschicht

2. Physics of Semiconductor Devices;Sze,1981

3. Al–GaAs (001) Schottky barrier formation

4. The effects of vacuum conditions on epitaxial Al/GaAs contacts formed by molecular‐beam epitaxy

5. Measurement of Richardson constant of GaAs Schottky barriers

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1. Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface;Journal of Materials Science: Materials in Electronics;2024-01

2. Rectification behavior of type-Ⅱ CuGa2O4/β-Ga2O3 heterojunction diode;Applied Surface Science;2023-05

3. Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices;Journal of Physics: Conference Series;2016-04

4. Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/p-Si Schottky barrier diode;Journal of Materials Science: Materials in Electronics;2012-07-11

5. Current-voltage-temperature analysis of inhomogeneous Au/n-GaAs Schottky contacts;The European Physical Journal Applied Physics;2005-08

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