Transferred-electron effect in InGaAsP alloys lattice-matched to InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. GaInAsP Alloy Semiconductors;Pearsall,1982
2. Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
3. Lpe growth of high purity InP and N- and P-In0.53Ga0.47As
4. Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n+-n-n+ transferred electron oscillators
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1. Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas;Japanese Journal of Applied Physics;2004-04-09
2. Transport;Semiconductor Alloys;1995
3. New method for determination of the peak‐velocity in epitaxial semiconductor structures by dc measurements on microbridges;Applied Physics Letters;1991-12-09
4. All-optical modulation at 1.3 ?m wavelength in the inGaAsP/InP system;Applied Physics B Photophysics and Laser Chemistry;1988-05
5. Velocity‐field characteristics of III‐V semiconductor alloys: Band structure influences;Journal of Applied Physics;1987-02-15
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