Excess gate current in the static induction transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. The gate currents of junction field-effect transistors at low temperatures
2. Field-effect transistor versus analog transistor (static induction transistor)
3. Excess gate current analysis of junction gate FET's by two- dimensional computer simulation
4. The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region
5. Double-drift IMPATT diodes near 100 GHz
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