Studies of turn-off effects in power semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. IEEE Conf. Rec. PS-WED-AMI;Porst,1974
2. Semiconductor Devices Workshop,1979
3. Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp
4. Step recovery of p−i−n diodes
5. Ramp recovery in p-i-n diodes
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3. Status and trends of power semiconductor device models for circuit simulation;IEEE Transactions on Power Electronics;1998-05
4. A fully-numerical model for PiN diodes implemented in the Saber circuit simulator;International Journal of Electronics;1998-04
5. A behavioral circuit simulation model for high-power GaAs Schottky diodes;IEEE Transactions on Electron Devices;1995
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