Hot-electron transport in In0.53Ga0.47As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K
2. Cyclotron resonance inn‐type In1−xGaxAsyP1−y
3. Cyclotron resonance and the magnetophonon effect in GaxIn1−xAsyP1−y
4. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
5. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
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