A normalized analytical solution for the capacitance associated with uniformly doped semiconductors at equilibrium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. See for example S. M. Sze, Physics of Semiconductor Devices, (2nd edn), Chap. 7.
2. Bulk and surface effects on Noise and signal behaviour of semiconductor devices;Jindal,1981
3. A general solution for step junctions with infinite extrinsic end regions at equilibrium
4. An extended and unified solution for the semiconductor surface problem at equilibrium
5. Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a Semiconductor
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling MOSFET surface capacitance behavior under non-equilibrium;Solid-State Electronics;2005-06
2. Field and related semiconductor-surface and equilibrium-step-junction variables in terms of the general solution;IEEE Transactions on Electron Devices;1984-07
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