Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Avalanche breakdown characteristics of a diffused P-N junction
2. Avalanche breakdown voltages of diffused silicon and germanium diodes
3. Determination of Avalanche Breakdown in pn Junctions
4. On Avalanche Multiplication in Semiconductor Devices†
5. F.R. Carlson; these data were presented in an undated brochure entitled Diffused Silicon Diodes, printed for external distribution by U.S. Semiconductor Products, Inc., Phoenix, Arizona, in approximately 1959. Mr. Carlson is now with General Semiconductor Industries, Inc., Tempe, Arizona
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