Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Current transport in metal-semiconductor barriers
2. Metal-silicon Schottky barriers
3. Metal-semiconductor surface barriers
4. Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers
5. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics
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