GaAs junction lasers containing the amphoteric dopants Ge and Si-Reference-Cited by-同舟云学术

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GaAs junction lasers containing the amphoteric dopants Ge and Si

Published:1970-02 Issue:2 Volume:13 Page:199-205
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Burnham R.D.,Dapkus P.D.,Holonyak N.,Keune D.L.,Zwicker H.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge

2. J.A. Rossi, N. Holonyak, Jr., P.D. Dakus, R.D. Burnham andF.V. Williams,J. appl. Phys. 40 (to be published)

3. paper presented at the Electrochem. Soc. Meeting;Rosztoczy,1968

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes;Materials Science and Engineering: B;2022-05

2. p‐GaAs/P‐Ga1−xAlxAs isotype heterojunctions in doubleheterostructure laser material;Journal of Applied Physics;1981-10

3. ELECTROLUMINESCENT SOURCES FOR FIBER SYSTEMS;Fundamentals of Optical Fiber Communications;1981

4. 4. Semiconductor Diode Lasers;Methods in Experimental Physics;1979

5. Chapter 2 Heterojunction Laser Diodes;Semiconductors and Semimetals;1979

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