A physical and computationally efficient methodology for statistical circuit simulation in bipolar technologies-Reference-Cited by-同舟云学术

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A physical and computationally efficient methodology for statistical circuit simulation in bipolar technologies

Published:1995-05 Issue:5 Volume:38 Page:1065-1073
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cho Hae-Seok,Fossum Jerry G

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Generation of correlated parameters for statistical circuit simulation

2. Predictive worst case statistical modeling of 0.8- mu m BICMOS bipolar transistors: a methodology based on process and mixed device/circuit level simulators

3. Statistical Simulation of the IC Manufacturing Process

4. FABRICS II: A Statistically Based IC Fabrication Process Simulator

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo Analysis;Encyclopedia of RF and Microwave Engineering;2005-04-15

2. Monte Carlo Analysis;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

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