A new approach to A.C. characterization of bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects
2. Past and Present of the Charge-Control Concept in the Characterization of the Bipolar Transistor
3. Fundamentals of Semiconductor Devices;Lindmayer,1965
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1. Modeling Nonquasi-Static Effects in SiGe HBTs;IEEE Transactions on Electron Devices;2010-07
2. A nonquasi-static table-based small-signal model of heterojunction bipolar transistor;IEEE Transactions on Electron Devices;2002-10
3. An accurate charge control approach for modeling excess phase shift in the base region of bipolar transistors;IEEE Transactions on Electron Devices;1996-07
4. Compact modeling of the influence of emitter stored charge on the high frequency small signal AC response of bipolar transistors using quasi-static parameters;IEEE Journal of Solid-State Circuits;1996
5. Reply to "A comment on the GTCC stored charge model";IEEE Transactions on Electron Devices;1994-05
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