Hall mobility of electrons in the space-charge layer of thin film CdSe transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
2. Hall Measurements on Silicon Field Effect Transistor Structures
3. Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effect
4. Electron Mobility Studies in Surface Space‐Charge Layers in Vapor‐Deposited CdS Films
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