The theory of transient photoconductive processes in II–VI compounds with three deep trapping levels-Reference-Cited by-同舟云学术

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The theory of transient photoconductive processes in II–VI compounds with three deep trapping levels

Published:1977-07 Issue:7 Volume:20 Page:583-593
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nussbaum Allen,Cook Earl L.,Korn Donald M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Analysis of photoconductivity applied to cadmium-sulfide-type photoconductors

2. Recombination Processes in Insulators and Semiconductors

3. Concepts in Photoconductivity and Allied Problems;Rose,1963

4. Electronic Properties of Crystalline Solids;Bube,1974

5. Infrared Quenching and a Unified Description of Photoconductivity Phenomena in Cadmium Sulfide and Selenide

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significant sensitivity enhancement of single crystal CdSe x-ray detector by liquid nitrogen cooling;Applied Physics Letters;2023-07-17

2. Analysis of transient photoconductivity in CdSe: Cu: Cl thin films;Physica Status Solidi (a);1994-03-16

3. Electrostatic and current transport properties ofn+/semi‐insulating GaAs junctions;Journal of Applied Physics;1993-10

4. Theory and analysis of transient photoconductivity in CdSe:Cu;Solid-State Electronics;1987-01

5. Chapter 2 The Theory of Semiconducting Junctions;Semiconductors and Semimetals;1981

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