Ohmic contacts to low-resistivity ZnS: Preparation, noise properties and nature of contact resistance-Reference-Cited by-同舟云学术

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Ohmic contacts to low-resistivity ZnS: Preparation, noise properties and nature of contact resistance

Published:1977-11 Issue:11 Volume:20 Page:879-882
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lukyanchikova N.B.,Pekar G.S.,Tkachenko N.N.,Hoang Mi Shin ,Sheinkman M.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Advances in injection luminescence of II–VI compounds

2. R. Jenkins, C.A. Mead and J. McCaldin, U.S. Patent No. 3.614.551, 19 Oct. (1971)

3. Ohmic contacts on semiconductors using indium amalgam

4. Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−X

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Ohmic Contacts to n-ZnSe for all-Electrical Quantum Devices;ACS Applied Electronic Materials;2020-03-02

2. Direct-current method for differentiating contact and bulk low frequency resistance fluctuations;Review of Scientific Instruments;1999-06

3. Mechanism of electroluminescence excitation in forward-biased MS and MIS light-emitting diodes based on wide-band-gap II–VI compounds;Physica Status Solidi (a);1981-04-16

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