High current gain heterojunction bipolar phototransistor for monolithic integrated photoreceiver
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD
2. Planar monolithic integration of a photodiode and a GaAs preamplifier
3. Monolithic PIN/preamplifier circuit integrated on a GaAs substrate
4. Performance comparison of heterojunction phototransistors, p-i-n FET's, and APD-FET's for optical fiber communication systems
5. Phototransistors, APD-FET, and PINFET optical receivers for 1-1.6-µm wavelength
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of InGaAs structures usinginsituelectrochemically generated arsine;Applied Physics Letters;1990-10-15
2. Chemical Beam Epitaxy;VLSI Electronics Microstructure Science;1989
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