A new integrated voltage-controlled negative resistance device-Lambda MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. A new Λ-type negative resistance device of integrated complementary FET structure
2. Voltage-controlled DNR in unijunction transistor structure
3. Proc. Int. Electron Dev. Meeting, Washington, D.C.;Thomas,1973
4. “GAMBIT: GAte Modulated BIpolar Transistor”
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A lambda-type current-controlled negative resistance device;Solid-State Electronics;1983-09
2. The new general realization theory of FET-like integrated voltage-controlled negative differential resistance devices;IEEE Transactions on Circuits and Systems;1981-05
3. Theoretical and experimental characterization of the DUal-BAse transistor (DUBAT);Solid-State Electronics;1980-11
4. An analysis and the fabrication technology of the lambda bipolar transistor;IEEE Transactions on Electron Devices;1980-02
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