The effect of heat treatment on unpassivated and passivated gallium arsenide surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSb
2. Investigation of Te‐Doped GaAs Annealing Effects by Optical‐ and Channeling‐Effect Measurements
3. The Characterization of GaAs Surfaces
4. Heat cycling of un-passivated GaAs surfaces
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2. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity;Journal of Physics D: Applied Physics;2005-05-06
3. CVD-SiO2 and plasma-SiNx films as Zn diffusion masks for GaAs;Journal of Electronic Materials;1984-03
4. Passivation of GaAs surfaces*;Journal of Electronic Materials;1983-03
5. Interfacial studies of deposited thin films of refractory metals on gallium arsenide substrates. Mo–GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983
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