Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach-Reference-Cited by-同舟云学术

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Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach

Published:1979-07 Issue:7 Volume:22 Page:599-620
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chwang R.,Kao Chung-Whei,Crowell C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Acta Physica Austriaca, Supp. X, The Boltzmann Equation;Seeger,1973

2. High Field Transport in Semiconductors;Conwell,1967

3. Theory of Electron Multiplication in Silicon and Germanium

5. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors

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1. Impact ionization in silicon: A microscopic view;Journal of Applied Physics;1998-05

2. Simulation of Silicon Devices: An Overview;Advanced Physical Models for Silicon Device Simulation;1998

3. Physics and numerical simulation of single photon avalanche diodes;IEEE Transactions on Electron Devices;1997

4. Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell;MOS-Feldeffekttransistoren;1994

5. Ionization energies in CdxHg1-xTe avalanche photodiodes;Semiconductor Science and Technology;1993-07-01

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